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FCP16N60 / FCPF16N60 600V N-Channel MOSFET
FCP16N60 / FCPF16N60
600V N-Channel MOSFET Features
* 650V @TJ = 150C * Typ. Rds(on)=0.22 * Ultra low gate charge (typ. Qg=45nC) * Low effective output capacitance (typ. Coss.eff=110pF) * 100% avalanche tested
SuperFETTM
Description
SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
January 2007
D
G GDS
TO-220
FCP Series
GD S
TO-220F
FCPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25 C) - Continuous (TC = 100 C) - Pulsed
(Note 1)
FCP16N60
16 10.1 48
FCPF16N60
600 16* 10.1* 48* 30 tbd 16
Unit
V A A A V mJ A mJ V/ns
20.8 4.5 167 1.33 -55 to +150 300 37.9 0.3
W W/ C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R R
JC JA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FCP16N60
0.75 62.5
FCPF16N60
3.3 62.5
Unit
C/W C/W
(c)2007 Fairchild Semiconductor Corporation
1
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FCP16N60 / FCPF16N60 Rev. A
FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FCP16N60 FCPF16N60
Device
FCP16N60 FCPF16N60
Package
TO-220 TO-220F
Reel Size
-
Tape Width
-
Quantity
50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd
TC = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Conditions
VGS = 0V, ID = 250 A, TJ = 25 C VGS = 0V, ID = 250 A, TJ = 150 C
Min
600 --------
Typ
-650 0.6 700 -----
Max Units
----1 10 100 -100 V V V/ C V A A nA nA
Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
ID = 250 A, Referenced to 25 C VGS = 0V, ID = 16A VDS = 600V, VGS = 0V VDS = 480V, TC = 125 C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250 A VGS = 10V, ID = 8A VDS = 40V, ID = 8A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.22 11.5 5.0 0.26 -S V
Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 16A RG = 25 -----1610 870 65 45 110 2100 1135 -58 -pF pF pF pF pF
Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480V, ID = 16A VGS = 10V
(Note 4, 5) (Note 4, 5)
--------
42 95 150 45 50 9.2 25
90 200 320 95 66 12 --
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr
NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 8A, VDD = 50V, RG = 25 , Starting TJ = 25 C 3. ISD 16A, di/dt 200A/ s, VDD BVDSS, Starting TJ = 25 C 2% 4. Pulse Test: Pulse width 300 s, Duty Cycle
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS =16A VGS = 0V, IS = 16A dIF/dt =100A/ s
(Note 4)
------
---450 8.2
16 48 1.4 ---
A A V ns C
5. Essentially Independent of Operating Temperature Typical Characteristics
2 FCP16N60 / FCPF16N60 Rev. A
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FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
2
Figure 2. Transfer Characteristics
10
2
ID, Drain Current [A]
10
1
ID , Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
10
1
150
25 -55 10
0
10
0
Notes : 1. 250 s Pulse Test 2. TC = 25
Note 1. VDS = 40V 2. 250 s Pulse Test
10
-1
10
0
10
1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
10
2
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
0.4
0.3
VGS = 10V
IDR , Reverse Drain Current [A]
RDS(ON) [ ], Drain-Source On-Resistance
10
1
0.2
VGS = 20V
0.1
150 10
0
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
Note : TJ = 25
0.0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
10000 9000 8000 7000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
12
VDS = 100V
VGS, Gate-Source Voltage [V]
10
VDS = 250V VDS = 400V
Capacitance [pF]
8
6000 5000 4000 3000 2000 1000 0 -1 10
Coss
Notes : 1. VGS = 0 V 2. f = 1 MHz
6
Ciss
4
Crss
2
Note : ID = 20A
10
0
10
1
0 0 10 20 30 40 50 60 70 80
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3 FCP16N60 / FCPF16N60 Rev. A
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FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
1.1
2.0
1.0
1.5
0.9
? Notes : 1. VGS = 0 V 2. ID = 250 ? A
1.0
Notes : 1. VGS = 10 V 2. ID = 20 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area for FCP20N60
Operation in This Area is Limited by R DS(on)
Figure 9-2. Maximum Safe Operating Area for FCPF20N60
Operation in This Area is Limited by R DS(on)
10
2
10
2
100 us
ID, Drain Current [A]
10
1
1 ms 10 ms DC
ID, Drain Current [A]
100 us
10
1
1 ms 10 ms 100 ms
10
0
10
0
DC
Notes :
Notes :
10
-1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
o
10
-1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
o
10
-2
10
0
10
1
10
2
10
3
10
-2
10
0
10
1
10
2
10
3
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
25
20
ID, Drain Current [A]
15
10
5
0 25
50
75
100
o
125
150
TC, Case Temperature [ C]
4 FCP16N60 / FCPF16N60 Rev. A
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FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FCP20N60
10
0
Z JC Thermal Response (t),
D = 0 .5
N o te s : 1 . Z JC = 0 .6 (t) /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P D M * Z JC (t)
0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1
10
-2
PDM t1
s in g le pu ls e
t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FCPF20N60
D = 0 .5
(t), Thermal Response
10
0
0 .2 0 .1 0 .0 5
10
-1
0 .0 2 0 .0 1
N o te s : 1 . Z J C t) = 3 .2 ( /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C t) (
JC
PDM
s in g le p u ls e
10
-2
Z
t1 t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
5 FCP16N60 / FCPF16N60 Rev. A
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FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
5K 0 1V 2 20F 0n 30F 0n
Sm Tp a e ye a DT sU VS D
VS G Q g 1V 0 Q g s Q g d
VS G
DT U
3A m
Cag hr e
Resistive Switching Test Circuit & Waveforms
V D S V G S R G
R L V D D
V D S
9 0 %
1 0 V
D U T
V G S
1 0 %
t(n d) o
t r tn o
t(f) df o tf o f
t f
Unclamped Inductive Switching Test Circuit & Waveforms
L V D S I D R G 1 0 V
tp
BS VS D 1 -- I 2 ---------E =--L S ---------A S A 2 B S- D VS V D D BS VS D IS A V D D I( t D) V D D
tp
D U T
V( Dt S) Te i m
6 FCP16N60 / FCPF16N60 Rev. A
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FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id t h D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
7 FCP16N60 / FCPF16N60 Rev. A
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FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
) (45
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
8 FCP16N60 / FCPF16N60 Rev. A
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FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Mechanical Dimensions (Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
9 FCP16N60 / FCPF16N60 Rev. A
15.87 0.20
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FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I22

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